Infineon IPD65R420CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching transistor is a critical component whose performance directly impacts overall efficacy. The Infineon IPD65R420CFD, a 650V CoolMOS™ CFD2 device, stands out as a premier solution engineered to meet these challenges in a wide array of high-performance applications.

This transistor belongs to Infineon's revolutionary CoolMOS™ CFD2 family, which is renowned for its exceptional efficiency stemming from superjunction technology. The "CFD" designation signifies Integrated Fast Body Diode and Current Sensing capabilities. The integrated diode is not just a standard body diode; it is optimized for very fast reverse recovery, significantly reducing switching losses and minimizing electromagnetic interference (EMI). This feature is paramount in hard-switching topologies like power factor correction (PFC) circuits, where diode reverse recovery behavior is a major contributor to losses.

A key metric for any power MOSFET is its on-state resistance (R DS(on)). The IPD65R420CFD offers an impressively low maximum R DS(on) of just 42 mΩ at a gate-source voltage of 10 V. This low resistance directly translates to reduced conduction losses, allowing for higher power throughput and cooler operation. When combined with its superior switching characteristics, this results in a device that excels in high-frequency switching applications, enabling designers to shrink the size of magnetic components and capacitors, thereby increasing power density.

The device's 650V voltage rating provides a robust safety margin for operations off universal input mains voltages (85 V AC to 265 V AC), making it an ideal choice for switched-mode power supplies (SMPS), server and telecom power systems, solar inverters, and industrial motor drives. Its ability to operate efficiently at higher frequencies allows for more compact and lighter designs without sacrificing performance.

Furthermore, the integrated current sensing feature provides a separate source pin that delivers a precise fraction of the drain current. This enables accurate, lossless current monitoring for over-current protection and control loop feedback, simplifying circuit design and enhancing system reliability.

ICGOOODFIND: The Infineon IPD65R420CFD is a high-efficiency 650V superjunction MOSFET that sets a benchmark for performance. Its combination of an ultra-low 42 mΩ R DS(on), an integrated fast body diode for minimized switching losses, and an integrated current sensing feature makes it a superior and highly versatile choice for designers aiming to push the boundaries of efficiency and power density in modern AC-DC and DC-DC power conversion systems.

Keywords: CoolMOS™ CFD2, High-Efficiency Switching, Integrated Fast Body Diode, Low R DS(on), Current Sensing.