Infineon IAUA250N04S6N007: A High-Performance 40 V OptiMOS Power MOSFET for Advanced Automotive and Industrial Applications

The relentless drive for higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems demands semiconductor components that push the boundaries of performance. Addressing this need, Infineon Technologies introduces the IAUA250N04S6N007, a state-of-the-art 40 V OptiMOS power MOSFET engineered to set new benchmarks in these demanding sectors.

This MOSFET is built upon Infineon’s advanced OptiMOS technology platform, which is renowned for its exceptionally low figure of merit (R DS(on) Q G). The IAUA250N04S6N007 exemplifies this with an ultra-low maximum on-state resistance (R DS(on)) of just 0.25 mΩ. This minimal resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. This allows for more compact designs by reducing the need for large heatsinks or enabling higher power output within the same form factor.

A key attribute of this device is its exceptional switching performance. With optimized internal packaging and gate characteristics, it achieves very low gate charge (Q G) and figures of merit, enabling faster switching frequencies. This is crucial for modern switch-mode power supplies (SMPS), motor drives, and DC-DC converters in both industrial automation and automotive applications, as it allows for smaller magnetic components and capacitors, further increasing power density.

The IAUA250N04S6N007 is specifically designed to thrive in the harsh environments typical of automotive applications. It boasts AEC-Q101 qualification, ensuring it meets the stringent reliability and quality standards required for automotive electronics. Its robust design makes it an ideal choice for a wide range of applications, including:

Automotive: Electric power steering (EPS), braking systems, 48V mild-hybrid systems, battery management (BMS), and advanced driver-assistance systems (ADAS).

Industrial: Server and telecom power supplies, industrial motor controls, robotics, and solar inverters.

Furthermore, the device is housed in an SSO8 5x6 clip-bonded package. This package offers an excellent power-to-size ratio and superior thermal performance due to its exposed top and bottom, facilitating efficient heat dissipation away from the silicon die. This enhances long-term reliability and allows for higher continuous current handling—up to 500 A.

ICGOOODFIND: The Infineon IAUA250N04S6N007 stands out as a premier solution for designers seeking to maximize efficiency and power density without compromising on robustness. Its combination of ultra-low R DS(on), superior switching characteristics, AEC-Q101 qualification, and thermally efficient packaging makes it a versatile and high-performance choice for the next generation of automotive and industrial power systems.

Keywords:

1. Ultra-low RDS(on)

2. AEC-Q101 Qualified

3. High Power Density

4. OptiMOS Technology

5. Automotive Applications