Infineon IKW15N120H3FKSA1: A High-Performance 1200V TRENCHSTOP™ IGBT7 for Advanced Switching Applications
The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies' TRENCHSTOP™ IGBT7 technology, a platform designed to set new benchmarks for performance. The IKW15N120H3FKSA1 stands as a prime example of this advancement, a 1200V IGBT7 tailored for demanding switching applications.
This device represents a significant leap over previous generations, drastically reducing both static and dynamic losses. A key innovation is the implementation of a micro-pattern trench (MPT) cell structure. This refined design optimizes the carrier concentration in the drift region, leading to a remarkably low typical saturation voltage (VCE(sat)) of just 1.35 V at nominal current. This directly translates to reduced conduction losses and higher overall system efficiency, particularly in continuous operation.
Furthermore, the IGBT7 technology achieves an exceptional balance with its switching characteristics. It features ultra-soft and fast switching behavior, which is crucial for minimizing electromagnetic interference (EMI) and easing the filtering requirements in circuit design. The reduced turn-off losses allow for higher switching frequencies, enabling designers to shrink the size of passive components like magnetics and capacitors, thereby increasing power density.
The IKW15N120H3FKSA1 is engineered for robustness and ease of use. It is offered in the robust TO-247 package, ensuring effective power dissipation and mechanical stability. The device integrates a monolithically integrated Temperature Sensitive and Insulated (TSP™) diode, providing a precise and reliable means for real-time temperature monitoring to safeguard against overheating. Its high short-circuit ruggedness (SCRT™) of 3 µs ensures operational stability under extreme fault conditions.
Target applications are diverse and demanding, including:
Solar inverters and energy storage systems (ESS)
Uninterruptible power supplies (UPS)
Industrial motor drives and controls
Welding equipment and induction heating
ICGOOODFIND: The Infineon IKW15N120H3FKSA1 is a superior 1200V IGBT that masterfully combines minimal conduction and switching losses, enhanced thermal performance, and increased system robustness. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.
Keywords: TRENCHSTOP™ IGBT7, High Efficiency, Low Saturation Voltage, Fast Switching, High Power Density.
