Infineon 2N7002DWH6327XTSA1: Dual N-Channel MOSFET in SOT-363 Package

The Infineon 2N7002DWH6327XTSA1 represents a highly integrated solution for modern electronic designs where board space is at a premium. This component is a dual N-channel enhancement mode MOSFET housed in an ultra-compact SOT-363 package. It is specifically engineered to provide the functionality of two independent MOSFETs in a single package, effectively halving the required PCB footprint compared to using two separate SOT-23 transistors. This makes it an ideal choice for high-density applications such as smartphones, wearables, portable IoT devices, and other space-constrained circuitry.

A key advantage of this MOSFET is its low threshold voltage, which ensures compatibility with modern low-voltage microcontrollers and logic circuits. It can be driven directly from GPIO pins (typically 3.3V or 1.8V), simplifying circuit design by eliminating the need for additional gate driver stages. Despite its miniature size, the device offers a continuous drain current of up to 210mA per channel, sufficient for a wide range of switching tasks like load switching, signal level shifting, and power management functions such as circuit protection and power gating.

The 2N7002DWH6327XTSA1 is characterized by its low on-state resistance (RDS(on)), which minimizes conduction losses and improves overall system efficiency. This is crucial for battery-powered devices where every milliwatt of saved power translates directly into extended operational life. Furthermore, the device boasts a fast switching speed, enabling efficient performance in high-frequency applications. The package itself is designed for excellent thermal performance and is compatible with standard automated PCB assembly processes, including pick-and-place and reflow soldering.

ICGOOODFIND: The Infineon 2N7002DWH6327XTSA1 is a standout component for designers prioritizing miniaturization and efficiency. Its dual MOSFET integration in a SOT-363 package offers a perfect blend of space savings, low-voltage operation, and reliable performance, making it a superior choice for cutting-edge portable and compact electronics.

Keywords: Dual N-Channel MOSFET, SOT-363 Package, Low Threshold Voltage, Load Switching, Low On-Resistance