Infineon IAUC100N04S6N015ATMA1 100V OptiMOS MOSFET for High-Efficiency Power Conversion
In the realm of modern power electronics, achieving high efficiency and reliability in power conversion systems is paramount. The Infineon IAUC100N04S6N015ATMA1 100V OptiMOS MOSFET stands out as a superior solution designed to meet these demanding requirements. This advanced MOSFET leverages Infineon’s cutting-edge OptiMOS technology, offering exceptional performance in a wide range of applications, including DC-DC converters, motor drives, and solar inverters.
One of the key strengths of the IAUC100N04S6N015ATMA1 is its extremely low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall system efficiency. With a maximum RDS(on) of just 1.5 mΩ, this device ensures that power dissipation is kept to a minimum, even under high-current conditions. This characteristic is particularly critical in high-frequency switching applications, where reducing losses directly translates to improved thermal management and higher power density.

Additionally, the MOSFET’s optimized gate charge (Qg) contributes to faster switching speeds, reducing switching losses and enabling higher frequency operation. This allows designers to create more compact and efficient power supplies without compromising performance. The 100V voltage rating provides sufficient headroom for various industrial and automotive applications, ensuring robust operation in challenging environments.
The IAUC100N04S6N015ATMA1 also features enhanced avalanche ruggedness and superior body diode performance, which increases system reliability under extreme conditions. Its low thermal resistance and compatibility with automated assembly processes make it an ideal choice for high-volume production.
ICGOOODFIND: The Infineon IAUC100N04S6N015ATMA1 100V OptiMOS MOSFET sets a new benchmark for high-efficiency power conversion, combining ultra-low RDS(on), fast switching capabilities, and exceptional reliability to meet the needs of next-generation power systems.
Keywords:
Power Efficiency, Low RDS(on), Fast Switching, OptiMOS Technology, High Reliability
