Infineon IRF8113TR: High-Performance Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power management components. At the heart of many advanced switching systems, from DC-DC converters and motor drives to power supplies, lies the power MOSFET. The Infineon IRF8113TR stands out as a premier component engineered to meet these challenges, offering a blend of performance, reliability, and efficiency that is critical for next-generation applications.
This MOSFET is characterized by its exceptionally low on-state resistance (R DS(on)) of just 1.8 mΩ (max). This ultra-low resistance is a key figure of merit, as it directly translates to minimized conduction losses during operation. When a MOSFET is fully turned on, a lower R DS(on) means less power is wasted as heat, leading to cooler running systems and significantly higher overall efficiency. This is particularly vital in high-current applications where even a small reduction in resistance can yield substantial energy savings and thermal management benefits.
Furthermore, the IRF8113TR is built using Infineon's advanced proprietary technology, which optimizes the device's switching characteristics. It features low gate charge (Q G) and low effective output capacitance (C OSS(eff)). These parameters are crucial for high-frequency switching. A lower gate charge allows for faster switching speeds and reduces the driving power required from the controller IC. Simultaneously, reduced output capacitance diminishes switching losses, which are often the dominant loss factor in high-frequency circuits. This combination enables designers to push switching frequencies higher, allowing for the use of smaller passive components like inductors and capacitors, thereby increasing power density.
Housed in a robust D 2PAK (TO-263) package, the IRF8113TR is designed for superior thermal performance. The package offers a very low thermal resistance from junction to case, ensuring that heat generated during operation is effectively transferred away from the silicon die to the PCB or an attached heatsink. This rugged construction guarantees long-term reliability even under demanding conditions. With a drain-source voltage (V DS) rating of 100 V and a continuous drain current (I D) of 195 A, it provides ample headroom for a wide array of industrial and automotive applications.
ICGOOODFIND: The Infineon IRF8113TR is a high-performance power MOSFET that excels in efficiency-critical switching applications. Its defining strengths are its ultra-low on-resistance for minimal conduction losses and optimized switching dynamics for high-frequency operation, all packaged in a thermally efficient housing for maximum reliability.
Keywords: Power MOSFET, Low R DS(on), High-Efficiency Switching, Thermal Performance, Power Density
