Infineon BSZ440N10NS3 G5: High-Performance 100V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon BSZ440N10NS3 G5 stands as a pinnacle of these qualities, representing the advanced OptiMOS™ 5 technology platform. This 100V N-channel power MOSFET is engineered to deliver exceptional performance in a wide array of demanding applications, from industrial motor drives and solar inverters to high-efficiency DC-DC converters and robust battery management systems.

The core of its superiority lies in its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 4.4 mΩ, this MOSFET minimizes conduction losses, allowing for more current to be handled with significantly less energy wasted as heat. This is complemented by its outstanding switching performance, facilitated by low gate charge (Q G). The result is faster switching speeds, which are crucial for high-frequency operation, leading to smaller magnetic components and overall higher power density in system design.

Furthermore, the device boasts enhanced ruggedness and reliability. Its optimized body diode provides excellent reverse recovery characteristics, reducing switching losses and electromagnetic interference (EMI) in hard-switching topologies. The G5 suffix indicates that it is part of a generation of products offering improved quality and performance consistency. Packaged in the space-efficient SuperSO8 (LFPAK) package, it offers an excellent thermal resistance-to-footprint ratio, enabling efficient heat dissipation from a very small PCB area. This makes it an ideal choice for modern applications where board space is at a premium.

ICGOOODFIND: The Infineon BSZ440N10NS3 G5 is a benchmark for high-performance 100V power switching. Its industry-leading low on-resistance, superior switching characteristics, and robust construction in a compact package make it an exceptional choice for designers aiming to maximize efficiency and power density in their next-generation power systems.

Keywords: OptiMOS™ 5, Low R DS(on), High Efficiency, SuperSO8, Power Density.