Infineon IHW30N160R2FKSA1: A New Benchmark in High-Power Switching with TRENCHSTOP™ IGBT7 Technology
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation. At the forefront of this evolution is Infineon Technologies with its latest generation of IGBTs. The IHW30N160R2FKSA1 Power Module stands as a prime example, incorporating the revolutionary TRENCHSTOP™ IGBT7 technology to set a new performance standard for applications requiring robust 1600V blocking voltage and 30A nominal current.
This module is engineered to address the core challenges in modern high-power systems, such as industrial motor drives, renewable energy inverters, and UPS systems. The heart of its superiority lies in the micro-pattern trench (MPT) technology intrinsic to the IGBT7 chip. This design achieves an optimal trade-off between low saturation voltage (Vce(sat)) and minimal switching losses, a historic compromise in power semiconductor design. The result is a significant reduction in total power losses, which directly translates into higher system efficiency and the potential for either increased output power or reduced cooling requirements.
Beyond the core transistor, the module features a calibrated and rugged anti-parallel emitter-controlled 7th generation diode. This co-optimized diode ensures excellent softness during reverse recovery, which is critical for minimizing voltage overshoots and electromagnetic interference (EMI) in hard-switching topologies. This leads to more stable and quieter system operation, reducing the need for complex snubber circuits.
The IHW30N160R2FKSA1 is offered in the industry-standard EASY 2B package, which provides low-indunce busbar connections for optimized switching performance. The module's high power cycling capability (PCsec) and strong isolation ensure long-term operational reliability under demanding thermal and mechanical stress. These features make it an ideal drop-in replacement for upgrading existing designs or for developing next-generation platforms that demand higher performance without increasing the form factor.
ICGOODFIND Summary: The Infineon IHW30N160R2FKSA1 is more than just a component; it is a comprehensive solution that leverages cutting-edge IGBT7 technology to deliver unmatched efficiency, robustness, and power density for 1600V applications, enabling designers to push the boundaries of their systems.
Keywords: TRENCHSTOP™ IGBT7, High Power Density, Low Switching Losses, 1600V Blocking Voltage, EASY 2B Package.
