Infineon IKP15N65H5: A High-Performance 650V Superjunction MOSFET for Power Electronics

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. Addressing these critical demands, the Infineon IKP15N65H5 stands out as a premier 650V Superjunction (SJ) MOSFET engineered to excel in high-efficiency switching applications. Leveraging Infineon's advanced CoolMOS™ technology, this device sets a new benchmark for performance in sectors such as switched-mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial motor drives.

At the core of the IKP15N65H5 is the revolutionary Superjunction structure, which fundamentally redefines the relationship between on-state resistance (RDS(on)) and breakdown voltage. This technology enables the MOSFET to achieve an exceptionally low specific on-resistance, significantly reducing conduction losses compared to conventional planar MOSFETs. With a maximum RDS(on) of just 0.15 Ω at 25°C, it facilitates higher efficiency by minimizing power dissipation during operation.

The device's high voltage rating of 650V provides a robust safety margin for operation in off-line applications, enhancing system reliability against voltage spikes and transients commonly encountered in real-world environments. Furthermore, the IKP15N65H5 exhibits superior switching characteristics. Its optimized internal gate resistor and low parasitic capacitances ensure fast switching speeds, which are crucial for high-frequency operation. This leads to reduced switching losses, allowing designers to push for higher power densities and smaller form factors in their systems.

Thermal management is a critical aspect of power design, and this MOSFET excels here as well. The low RDS(on) directly contributes to lower Joule heating, while the efficient TO-220 package ensures excellent thermal conductivity, enabling effective heat dissipation away from the silicon die. This combination allows for higher continuous and peak current handling (up to 15A), supporting demanding applications without compromising longevity.

A key feature for modern eco-designs is its performance at high junction temperatures. The device maintains stable operation and low losses even at elevated temperatures, contributing to the overall energy efficiency and reliability of the end product.

ICGOOODFIND: The Infineon IKP15N65H5 is a top-tier 650V Superjunction MOSFET that delivers an outstanding blend of ultra-low conduction losses, fast switching speed, and high ruggedness. It is an ideal semiconductor solution for designers aiming to maximize efficiency and power density in advanced power conversion systems.

Keywords: Superjunction MOSFET, High Efficiency, Low RDS(on), 650V Rating, Power Density.